STF11N60M2-EP datasheet(3/14 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 3.75 A

0.550

0.595

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

390

Coss

Output capacitance

Crss

Reverse transfer capacitance

0.7

Coss eq. (1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

Total gate charge

VDD = 480 V, ID = 7.5 A,

VGS = 0 to 10 V

(see Figure 15. Test circuit for gate

charge behavior)

12.4

Qgs

Gate-source charge

2.1

Qgd

Gate-drain charge

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

E(off)

Turn-off energy

(from 90% VGS to 0% ID)

VDD = 400 V, ID = 1 A,

RG = 4.7 Ω, VGS = 10 V

2.5

µJ

VDD = 400 V, ID = 3 A,

RG = 4.7 Ω, VGS = 10 V

µJ

STF11N60M2-EP

Electrical characteristics

DS11598 - Rev 4

page 3/14

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