STF20N60M2-EP datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage

Drain current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V, TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 6.5 A

0.230

0.278

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz, VGS = 0 V

787

Coss

Output capacitance

Crss

Reverse transfer capacitance

1.2

Coss eq. (1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

5.9

Total gate charge

VDD = 480 V, ID = 13 A, VGS = 0 to 10 V

(see Figure 15. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

3.5

Qgd

Gate-drain charge

10.5

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eoff

Turn-off energy (from 90% VGS

to 0% ID)

VDD= 400 V, ID = 2 A, RG= 4.7 Ω,

VGS= 10 V

7.2

μJ

VDD= 400 V, ID = 5 A, RG= 4.7 Ω,

VGS= 10 V

20.4

μJ

STF20N60M2-EP

Electrical characteristics

DS11486 - Rev 4

page 3/14

STF20N60M2-EP Datasheet(PDF) 3 Page - STMicroelectronics

STF20N60M2-EP Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL