STF26N65DM2 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STF26N65DM2

Description	N-channel 650 V, 0.156 typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 20 A

1.6

trr

Reverse recovery time

ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

100

Qrr

Reverse recovery charge

0.365

µC

IRRM

Reverse recovery current

7.3

trr

Reverse recovery time

ISD = 20 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

200

Qrr

Reverse recovery charge

1.39

µC

IRRM

Reverse recovery current

13.9

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STF26N65DM2

Electrical characteristics

DS12426 - Rev 2

page 4/13

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