STFH40N60M2 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STFH40N60M2

Description	N-channel 600 V, 0.078 typ., 34 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STFH40N60M2

Electrical characteristics

DocID029433 Rev 1

5/12

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

ISDM(2)

Source-drain current

(pulsed)

136

VSD(3)

Forward on voltage

ISD = 34 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 34 A, di/dt = 100 A/µs

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

440

Qrr

Reverse recovery charge

8.2

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 34 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

568

Qrr

Reverse recovery charge

11.5

µC

IRRM

Reverse recovery current

40.5

Notes:

(1)The value is rated according to Rthj-case and limited by package.

(2)Pulse width limited by safe operating area.

(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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