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STFU10NK60Z Datasheet(PDF) 1 Page - STMicroelectronics |
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STFU10NK60Z Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() December 2016 DocID028779 Rev 3 1/13 This is information on a product in full production. www.st.com STFU10NK60Z N- channel 600 V, 0.68 Ω typ., 10 A, SuperMESH™ Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10 A 35 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Applications Switching applications Description This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well- established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1: Device summary Order code Marking Package Packaging STFU10NK60Z 10NK60Z TO-220FP ultra narrow leads Tube TO-220FP ultra narrow leads 1 2 3 |
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