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STFU11N65M2 Datasheet(PDF) 6 Page - STMicroelectronics |
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STFU11N65M2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Figure 7. Capacitance variations GIPG140815MQF1PCVR 103 102 101 100 10-1 10-1 100 101 102 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Normalized gate threshold voltage vs temperature GIPG110515MQF1LVTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj (°C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GIPG110515MQF1LRON 2.2 1.8 1.4 1.0 0.6 0.2 -75 -25 25 75 125 RDS(on) (norm.) Tj (°C) VGS = 10 V Figure 10. Normalized V(BR)DSS vs temperature GIPG110515MQF1LBDV 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) Tj (°C) ID = 1 mA Figure 11. Output capacitance stored energy GIPG110515MQF1LEOS 3 2 1 0 0 100 200 300 400 500 600 EOSS (μJ) VDS (V) Figure 12. Source-drain diode forward characteristics GIPG140815MQF1PSDF 1.0 0.8 0.6 0.4 0 2 4 6 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C STFU11N65M2 Electrical characteristics (curves) DS12086 - Rev 2 page 6/12 |
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