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STL15N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL15N60DM6
Description  N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL15N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG191220191108SOA
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =100µs
tp =1µs
tp =10µs
tp =1ms
V(BR)DSS
tp =10ms
TC = 25 °C
TJ ≤ 150 °C
Single pulse
IDM
RDS(on) max.
Figure 2. Maximum transient thermal impedance
GADG191220191145ZTH
10 0
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ton
T
duty = ton / T
RthJ-C = 1.96 °C/W
°C/W
ZthJ-C
Single pulse
0.05
0.1
0.2
0.3
duty=0.5 0.4
Figure 3. Typical output characteristics
GADG201220190735OCH
30
25
20
15
10
5
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =8V
VGS =7V
VGS =6V
VGS = 9, 10 V
Figure 4. Typical transfer characteristics
GADG201220190736TCH
30
25
20
15
10
5
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Typical gate charge characteristics
GADG191220192038QVG
500
400
300
200
100
0
10
8
6
4
2
0
0
3
6
9
12
15
Qg (nC)
VDS
(V)
VGS
(V)
Qg
Qgs
Qgd
VDD = 480 V,
ID = 12 A
Figure 6. Typical drain-source on-resistance
GADG201220190740RID
315
305
295
285
275
0
2
4
6
8
ID (A)
RDS(on)
(mΩ)
VGS = 10 V
STL15N60DM6
Electrical characteristics (curves)
DS13209 - Rev 2
page 5/15



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