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STL15N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL15N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Typical capacitance characteristics GADG201220190738CVR 10 3 10 2 10 1 10 0 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Typical output capacitance stored energy GADG201220190733EOS 6 5 4 3 2 1 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) Figure 9. Normalized gate threshold vs temperature GADG201220190743VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID = 250 μA Figure 10. Normalized on-resistance vs temperature GADG201220190743RON 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS = 10 V Figure 11. Normalized breakdown voltage vs temperature GADG201220190741BDV 1.10 1.05 1.00 0.95 0.90 0.85 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 12. Typical reverse diode forward characteristics GADG201220190737SDF 1.2 1.0 0.8 0.6 0.4 0 2 4 6 8 VSD (V) ISD (A) TJ = -50 °C TJ = 25 °C TJ = 150 °C STL15N60DM6 Electrical characteristics (curves) DS13209 - Rev 2 page 6/15 |
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