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STO24N60M6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STO24N60M6
Description  N-channel 600 V, 162 m typ., 17 A, MDmesh M6 Power MOSFET in a TO‑LL package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STO24N60M6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG180520211020SOA
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =1µs
tp =10µs
tp =100µs
tp =1ms
tp =10ms
V(BR)DSS
Single pulse
TJ ≤ 150 °C
TC = 25 °C
IDM
RDS(on) max.
Figure 2. Maximum transient thermal impedance
GADG180520211020ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ton
T
duty = ton / T
RthJC = 0.88 °C/W
ZthJC
(°C/W)
duty=0.5
0.4
0.3 0.2
Single pulse
0.05
0.1
Figure 3. Typical output characteristics
GADG200720180952OCH
50
40
30
20
10
0
0
2
4
6
8
10 12 14 16
ID
(A)
VDS (V)
VGS = 6 V
VGS = 7 V
VGS = 8 V
VGS = 9, 10 V
Figure 4. Typical transfer characteristics
GADG200720180952TCH
50
40
30
20
10
0
2
3
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 16 V
Figure 5. Typical gate charge characteristics
GADG180520211021QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
4
8
12
16
20
24
VDS
(V)
VGS
(V)
Qg (nC)
Qg
Qgd
Qgs
VDS
VDS
VDD = 480 A, ID = 17 A
Figure 6. Typical drain-source on-resistance
GADG010820181133RID
178
174
170
166
162
158
154
150
0
2
4
6
8
10 12 14 16
RDS(on)
(mΩ)
ID (A)
VGS = 10V
STO24N60M6
Electrical characteristics (curves)
DS13749 - Rev 1
page 5/15



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