HIN

up to 500 V or 600 V

TO

LOAD

V

DD

V

B

V

S

HO

LO

COM

HIN

LIN

V

SS

SD

V

CC

LIN

V

DD

SD

V

SS

V

CC

Features

Description

HIGH AND LOW SIDE DRIVER

Product Summary

VOFFSET (IRS2110)

500 V max.

(IRS2113)

600 V max.

IO+/-

2 A/2 A

VOUT

10 V - 20 V

ton/off (typ.)

130 ns & 120 ns

Delay Matching (IRS2110)

10 ns max.

(IRS2113)

20 ns max.

www.irf.com

1

The IRS2110/IRS2113 are high voltage, high speed

power MOSFET and IGBT drivers with independent

high and low side referenced output channels. Pro-

prietary HVIC and latch immune CMOS technologies

enable ruggedized monolithic construction. Logic in-

puts are compatible with standard CMOS or LSTTL

output, down to 3.3 V logic. The output drivers feature

a high pulse current buffer stage designed for mini-

mum driver cross-conduction. Propagation delays are

matched to simplify use in high frequency applications.

The floating channel can be used to drive an N-chan-

nel power MOSFET or IGBT in the high side configura-

tion which operates up to 500 V or 600 V.

IRS2110(-1,-2,S)PbF

IRS2113(-1,-2,S)PbF

(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connec-

tions only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

Typical Connection

PRELIMINARY

Packages

14-Lead PDIP

IRS2110 and IRS2113

14-Lead PDIP

(w/o lead 4)

IRS2110-1 and IRS2113-1

16-Lead PDIP

(w/o leads 4 & 5)

IRS2110-2 and IRS2113-2

16-Lead SOIC

IRS2110S and

IRS2113S

Data Sheet No. PD60249 revB