TCET1100, TCET1100G

www.vishay.com

Vishay Semiconductors

Rev. 2.4, 13-Jan-2021

2

Document Number: 83503

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

(1) Refer to wave profile for soldering conditions for through hole devices

Notes

• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the

temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of

PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal

Characteristics of Optocouplers” application note

(1) For 2 layer FR4 board (4" x 3" x 0.062")

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

VR

6V

Forward current

IF

60

mA

Forward surge current

tp

≤ 10 μs

IFSM

1.5

A

OUTPUT

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector current

IC

50

mA

Collector peak current

tp/T = 0.5, tp

≤ 10 ms

ICM

100

mA

COUPLER

Isolation test voltage (RMS)

t = 1 min

VISO

5000

VRMS

Operating ambient temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-55 to +125

°C

Soldering temperature (1)

2 mm from case,

≤ 10 s

Tsld

260

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

LED power dissipation

Pdiss

100

mW

Output power dissipation

Pdiss

150

mW

Maximum LED junction temperature

Tjmax.

125

°C

Maximum output die junction temperature

Tjmax.

125

°C

Thermal resistance, junction emitter to board

θEB

173

°C/W

Thermal resistance, junction emitter to case

θEC

149

°C/W

Thermal resistance, junction detector to board

θDB

111

°C/W

Thermal resistance, junction detector to case

θDC

127

°C/W

Thermal resistance, junction emitter to

junction detector

θED

173

°C/W

Thermal resistance, board to ambient (1)

θBA

197

°C/W

Thermal resistance, case to ambient (1)

θCA

4041

°C/W

T

A

θ

CA

T

C

T

JD

T

JE

T

B

θ

EC

θ

EB

θ

DC

θ

DB

θ

BA

θ

DE

T

A

19996

Package