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STD12N60M2 Datasheet(PDF) 6 Page - STMicroelectronics |
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STD12N60M2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 19 page ![]() Figure 5. Normalized gate threshold voltage vs temperature T j(°C) I D = 250 µA V GS(th) 1.00 0.90 0.80 0.70 -50 0 (norm) 1.10 50 100 AM03184v1 Figure 6. Normalized V(BR)DSS vs temperature GIPG110515MQF1LBDV 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V (BR)DSS (norm.) T j (°C) I D = 1 mA Figure 7. Static drain-source on-resistance GIPG140520151538RID 0.415 0.405 0.395 0.385 0.375 0 2 4 6 8 10 R DS(on) (Ω) I D (A) V GS = 10 V Figure 8. Normalized on-resistance vs temperature GIPG110515MQF1LRON 2.2 1.8 1.4 1.0 0.6 0.2 -75 -25 25 75 125 R DS(on) (norm.) T j (°C) V GS = 10 V Figure 9. Gate charge vs. gate-source voltage GIPG140515MQ6EDQVG 12 10 8 6 4 2 0 0 4 8 12 16 V GS (V) Q g (nC) V DS V DD = 480 V I D = 9 A V DS (V) 500 400 300 200 100 0 Figure 10. Capacitance variations V DS(V) f = 1 MHz C iss C oss C rss C (pF) 100 10 1 0.1 0.1 1 10 100 1000 GIPG290120151705ALS STD12N60M2 Electrical characteristics curves DS10854 - Rev 2 page 6/19 |
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