1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

9

A

ID

Drain current (continuous) at TC= 100 °C

5.7

A

IDM (1)

Drain current (pulsed)

36

A

PTOT

Total power dissipation at TC = 25 °C

85

W

dv/dt (2)

Peak diode recovery voltage slope

15

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

V/ns

Tstg

Storage temperature range

- 55 to 150

°C

Tj

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 9 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.47

°C/W

Rthj-pcb (1) Thermal resistance junction-pcb

50

°C/W

1. When mounted on FR-4 board of 1 inch², 2 oz Cu

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

2.6

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

117

mJ

STD12N60M2

Electrical ratings

DS10854 - Rev 2

page 2/19