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P1012AP Datasheet(PDF) 4 Page - ON Semiconductor |
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P1012AP Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 25 page ![]() NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 www.onsemi.com 4 MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage on all pins, except Pin 5 (Drain) VCC −0.3 to 10 V Drain Voltage − −0.3 to 700 V Drain Current Peak during Transformer Saturation NCP1010/11 NCP1012/13/14 IDS(pk) 550 1.0 mA A Maximum Current into Pin 1 when Activating the 8.7 V Active Clamp I_VCC 15 mA Thermal Characteristics P Suffix, Case 626A Junction−to−Lead Junction−to−Air, 2.0 oz (70 mm) Printed Circuit Copper Clad 0.36 Sq. Inch (2.32 Sq. Cm) 1.0 Sq. Inch (6.45 Sq. Cm) ST Suffix, Plastic Package Case 318E Junction−to−Lead Junction−to−Air, 2.0 oz (70 mm) Printed Circuit Copper Clad 0.36 Sq. Inch (2.32 Sq. Cm) 1.0 Sq. Inch (6.45 Sq. Cm) RqJL RqJA RqJL RqJA 9.0 77 60 14 74 55 °C/W Maximum Junction Temperature TJmax 150 °C Storage Temperature Range − −60 to +150 °C ESD Capability, Human Body Model (All pins except HV) − 2.0 kV ESD Capability, Machine Model − 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 8.0 V unless otherwise noted.) Rating Pin Symbol Min Typ Max Unit SUPPLY SECTION AND VCC MANAGEMENT VCC Increasing Level at which the Current Source Turns−off 1 VCCOFF 7.9 8.5 9.1 V VCC Decreasing Level at which the Current Source Turns−on 1 VCCON 6.9 7.5 8.1 V Hysteresis between VCCOFF and VCCON 1 − − 1.0 − V VCC Decreasing Level at which the Latch−off Phase Ends 1 VCClatch 4.4 4.7 5.1 V VCC Decreasing Level at which the Internal Latch is Released 1 VCCreset − 3.0 − V Internal IC Consumption, MOSFET Switching at 65 kHz (Note 2) 1 ICC1 − 0.92 1.1 mA Internal IC Consumption, MOSFET Switching at 100 kHz (Note 2) 1 ICC1 − 0.95 1.15 mA Internal IC Consumption, MOSFET Switching at 130 kHz (Note 2) 1 ICC1 − 0.98 1.2 mA Internal IC Consumption, Latch−off Phase, VCC = 6.0 V 1 ICC2 − 290 − mA Active Zener Voltage Positive Offset to VCCOFF 1 Vclamp 140 200 300 mV Latch−off Current NCP1012/13/14 0 °C < TJ < 125°C −40 °C < TJ < 125°C NCP1010/11 0 °C < TJ < 125°C −40 °C < TJ < 125°C 1 ILatch 6.3 5.8 5.8 5.3 7.4 7.4 7.3 7.3 9.2 9.2 9.0 9.0 mA POWER SWITCH CIRCUIT Power Switch Circuit On−state Resistance NCP1012/13/14 (Id = 50 mA) TJ = 25°C TJ = 125°C NCP1010/11 (Id = 50 mA) TJ = 25°C TJ = 125°C 5 RDSon − 11 19 22 38 16 24 35 50 W 2. See characterization curves for temperature evolution. 3. Adjust di/dt to reach Ipeak in 3.2 msec. 4. See characterization curves for temperature evolution. |
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