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P1012AP Datasheet(PDF) 5 Page - ON Semiconductor

Part # P1012AP
Description  Self-Supplied Monolithic Switcher for Low Standby- Power Offline SMPS
PDF  25 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

P1012AP Datasheet(HTML) 5 Page - ON Semiconductor

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C,
VCC = 8.0 V unless otherwise noted.)
Rating
Unit
Max
Typ
Min
Symbol
Pin
POWER SWITCH CIRCUIT
Power Switch Circuit and Startup Breakdown Voltage
(ID(off) = 120 mA, TJ = 25°C)
5
BVdss
700
−
−
V
Power Switch and Startup Breakdown Voltage Off−state Leakage Current
TJ = −40°C (Vds = 650 V)
TJ = 25°C (Vds = 700 V)
TJ = 125°C (Vds = 700 V)
5
5
5
IDS(OFF)
−
−
−
70
50
30
120
−
−
mA
Switching Characteristics (RL = 50
W, Vds Set for Idrain = 0.7 x Ilim)
Turn−on Time (90%−10%)
Turn−off Time (10%−90%)
5
5
ton
toff
−
−
20
10
−
−
ns
INTERNAL STARTUP CURRENT SOURCE
High−voltage Current Source, VCC = 8.0 V
NCP1012/13/14
0
°C < TJ < 125°C
−40
°C < TJ < 125°C
NCP1010/11
0
°C < TJ < 125°C
−40
°C < TJ < 125°C
1
IC1
5.0
5.0
5.0
5.0
8.0
8.0
8.0
8.0
10
11
10.3
11.5
mA
High−voltage Current Source, VCC = 0
1
IC2
−
10
−
mA
Minimum Start−up Drain Voltage (Istart = 0.5 mA, Vcc = Vcc(on) − 0.2 V)
5
Vstart(min)
−
15
−
V
CURRENT COMPARATOR TJ = 25°C (Note 2)
Maximum Internal Current Setpoint, NCP1010 (Note 3)
5
Ipeak (22)
90
100
110
mA
Maximum Internal Current Setpoint, NCP1011 (Note 3)
5
Ipeak (22)
225
250
275
mA
Maximum Internal Current Setpoint, NCP1012 (Note 3)
5
Ipeak (11)
225
250
275
mA
Maximum Internal Current Setpoint, NCP1013 (Note 3)
5
Ipeak (11)
315
350
385
mA
Maximum Internal Current Setpoint, NCP1014 (Note 3)
5
Ipeak (11)
405
450
495
mA
Default Internal Current Setpoint for Skip−Cycle Operation, Percentage of
Max Ip
−
ILskip
−
25
−
%
Propagation Delay from Current Detection to Drain OFF State
−
TDEL
−
125
−
ns
Leading Edge Blanking Duration
−
TLEB
−
250
−
ns
INTERNAL OSCILLATOR
Oscillation Frequency, 65 kHz Version, TJ = 25°C (Note 4)
−
fOSC
59
65
71
kHz
Oscillation Frequency, 100 kHz Version, TJ = 25°C (Note 4)
−
fOSC
90
100
110
kHz
Oscillation Frequency, 130 kHz Version, TJ = 25°C (Note 4)
−
fOSC
117
130
143
kHz
Frequency Dithering Compared to Switching Frequency
(with active DSS)
−
fdither
−
"3.3
−
%
Maximum Duty−cycle
−
Dmax
62
67
72
%
FEEDBACK SECTION
Internal Pull−up Resistor
4
Rup
−
18
−
k
W
Internal Soft−Start (Guaranteed by Design)
−
Tss
−
1.0
−
ms
SKIP−CYCLE GENERATION
Default Skip Mode Level on FB Pin
4
Vskip
−
0.5
−
V
TEMPERATURE MANAGEMENT
Temperature Shutdown
−
TSD
140
150
160
°C
Hysteresis in Shutdown
−
−
−
50
−
°C
2. See characterization curves for temperature evolution.
3. Adjust di/dt to reach Ipeak in 3.2
msec.
4. See characterization curves for temperature evolution.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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