STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z

Electrical characteristics

Doc ID 9567 Rev 7

5/22

2

Electrical characteristics

(TCASE=25°C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

800

V

IDSS

Peak diode recovery

voltage slope

VDS = 800 V,

VDS =800 V, Tc=125°C

1

50

µA

µA

IGSS

Gate body leakage current

(VGS = 0)

VGS = ± 20V

±

10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100µA

33.75

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS= 10V, ID = 5.25A

0.65

0.75

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance VDS =15V, ID = 5.25A

-

12

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

-

2620

250

53

-

pF

pF

pF

Cosseq

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 640V

-

100

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=640V, ID = 10.5A

VGS =10V

(see Figure 21)

-

87

14

44

-

nC

nC

nC

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Off-voltage rise time

Fall time

VDD=400 V, ID= 5.25A,

RG=4.7Ω, VGS=10V

(see Figure 22)

-

30

18

70

20

-

ns

ns

ns

ns

tr(Voff)

tf

tc

Off voltage rise time

Fall time

Cross-over time

VDD=640 V, ID= 10.5A,

RG=4.7Ω, VGS=10V

(see Figure 22)

-

16

15

28

-

ns

ns

ns