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STF12NK80Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STF12NK80Z
Description  N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
PDF  22 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF12NK80Z Datasheet(HTML) 3 Page - STMicroelectronics

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STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Electrical ratings
Doc ID 9567 Rev 7
3/22
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
800
V
VDGR
Drain-gate voltage (RGS = 20KΩ)
800
V
VGS
Gate-source voltage
± 30V
ID
Drain current (continuous) at TC = 25°C
10.5
10.5(1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC=100°C
6.6
6.6(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
42
42(1)
A
PTOT
Total dissipation at TC = 25°C
190
40
W
Derating factor
1.52
0.32W/°C
Vesd(G-S)
G-S ESD (HBM C= 100pF, R= 1.5k
Ω)4
kV
VISO
Insulation withstand voltage (DC)
--
2500
V
dv/dt(3)
3.ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
4.5
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220/
D²PAK
TO-220FP
TO-247
Rthj-case
Thermal resistance junction-case max
0.66
3.1
0.66
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
50
°C/W



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