STF14N80K5, STFI14N80K5

Electrical ratings

DocID027725 Rev 2

3/16

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID

(1)

Drain current (continuous) at TC = 25 °C

12

A

ID

(1)

Drain current (continuous) at TC = 100 °C

7.4

A

ID

(2)

Drain current (pulsed)

48

A

PTOT

Total dissipation at TC = 25 °C

30

W

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t=1 s; TC=25 °C)

2500

V

dv/dt

(3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature

- 55 to 150

°C

TJ

Operating junction temperature

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width limited by safe operating area.

(3)

ISD ≤ 12 A, di/dt 100 A/μs; VDS peak < V(BR)DSS,VDD= 640 V

(4)

VDS ≤ 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

4

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

270

mJ