STF10N80K5, STFU10N80K5

Electrical characteristics

DocID026564 Rev 5

5/17

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 400 V, ID = 4.5 A, RG

= 4.7 Ω

VGS = 10 V See Figure 15: "Test circuit for

resistive load switching times" and Figure

20: "Switching time waveform"

-

14.5

-

ns

tr

Rise time

-

11

-

ns

td(off)

Turn-off

delay time

-

35

-

ns

tf

Fall time

-

14

-

ns

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

-

9

A

ISDM(1)

Source-drain

current (pulsed)

-

36

A

VSD(2)

Forward on

voltage

ISD = 9 A, VGS = 0 V

-

1.5

V

trr

Reverse

recovery time

ISD = 9 A, di/dt = 100 A/µs,

VDD = 60 V, see Figure 17: "Test circuit

for inductive load switching and diode

recovery times")

-

370

ns

Qrr

Reverse

recovery charge

-

4.58

µC

IRRM

Reverse

recovery current

-

25

A

trr

Reverse

recovery time

ISD = 9 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

see Figure 17: "Test circuit for inductive

load switching and diode recovery

times"

-

520

ns

Qrr

Reverse

recovery charge

-

5.88

µC

IRRM

Reverse

recovery current

-

22.5

A

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

V (BR)GSO

Gate-source breakdown voltage

IGS = ± 1 mA, ID = 0 A

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.