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STF10N80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STF10N80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() September 2016 DocID026564 Rev 5 1/17 This is information on a product in full production. www.st.com STF10N80K5, STFU10N80K5 N- channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STF10N80K5 800 V 0.600 Ω 9 A 30 W STFU10N80K5 Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STF10N80K5 10N80K5 TO-220FP Tube STFU10N80K5 TO-220FP ultra narrow leads |
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