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STG35M120F3D7 Datasheet(PDF) 2 Page - STMicroelectronics |
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STG35M120F3D7 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() 1 Mechanical parameters Table 1. Mechanical parameters Parameter Value Unit Die size including scribe line 6.44 x 5.74 mm² Wafer size 200 mm Maximum possible dice per wafer 690 dice Die thickness 110 μm Front-side passivation Silicon nitride Emitter pad size including gate pad x2 5.42 x 2.22 mm² Gate pad size 0.82 x 1.20 mm² Front-side metallization Composition AlCu Thickness 4.5 μm Back-side metallization Composition AI/Ti/NiV/Ag Thickness 0.65 μm Die bond Electrically conductive glue or soft solder Recommended wire bonding ≤500 μm STG35M120F3D7 Mechanical parameters DS12463 - Rev 1 page 2/9 |
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