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STG35M120F3D7 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STG35M120F3D7
Description  1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STG35M120F3D7 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. Switching characteristics on inductive load (not tested at chip level, verified by design/
characterization)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off delay time
VCE = 600 V, Ic = 35 A,
VGE = ±15 V, RG = 10 Ω
-
135
-
ns
tf
Current fall time
-
133
-
ns
Eoff (1)
Turn-off switching energy
-
1.83
-
mJ
td(off)
Turn-off delay time
VCC = 600 V, Ic = 35 A,
VGE = ±15 V, RG = 10 Ω,
TJ = 150 °C
-
140
-
ns
tf
Current fall time
-
224
-
ns
Eoff (1)
Turn-off switching energy
-
2.85
-
mJ
1. Including the tail of the collector current.
Note:
Switching characteristics and thermal properties are strongly dependent on the module design and the mounting
technology. Please refer to A2C35S12M3 or A2C35S12M3-F datasheets for further information.
STG35M120F3D7
Electrical ratings
DS12463 - Rev 1
page 4/9



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