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STGW60H65F Datasheet(PDF) 4 Page - STMicroelectronics |
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STGW60H65F Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() Electrical characteristics STGW60H65F, STGWT60H65F 4/14 Doc ID 019012 Rev 5 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) (1) tr (1) (di/dt)on (1) 1. Eon is the turn-on losses when a SiC diode (STPSC1206D) is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 65 30 2000 - ns ns A/µs td(on) (1) tr (1) (di/dt)on (1) Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 63 33 1800 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 35 180 43 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 46 210 85 - ns ns ns Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a SiC diode (STPSC1206D) is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). 2. Turn-off losses include also the tail of the collector current. Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 0.75 1.05 1.80 - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 0.8 1.4 2.2 - mJ mJ mJ Obsolete Product(s) - Obsolete Product(s) |
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