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STI70N10F4 Datasheet(PDF) 7 Page - STMicroelectronics |
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STI70N10F4 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 12 page ![]() STI70N10F4 Electrical characteristics Doc ID 16292 Rev 1 7/12 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 10 Qg(nC) (V) 40 8 20 30 10 VDD=50V VGS=10V ID=65A 50 12 60 70 AM05446v1 C 1000 100 0 50 VDS(V) (pF) 25 75 Ciss Coss Crss AM03172v1 VGS(th) 0.8 0.6 0.4 -75 -25 TJ(°C) (norm) 125 25 75 1.0 1.2 175 VDS=VGS ID=250µA AM03173v1 RDS(on) 0.4 0.2 -75 25 TJ(°C) (norm) -25 75 125 0.8 0.6 1.2 1.0 1.6 1.4 1.8 2.2 2.0 VGS=10V ID=30A AM03174v1 VSD 0 10 ISD(A) (V) 5 25 15 20 0.4 0.5 0.6 0.7 0.8 0.9 30 TJ=-55°C TJ=175°C TJ=25°C AM03175v1 Obsolete Product(s) - Obsolete Product(s) |
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