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STL12N10F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL12N10F7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() Figure 7. Capacitance variations GADG070620181152CVR 103 102 101 10-1 100 101 C (pF) VDS (V) CISS COSS CRSS Figure 8. Normalized gate threshold voltage vs temperature GADG070620181153VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj (°C) ID = 250 µA Figure 9. Normalized on-resistance vs temperature GADG070620181154RON 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS = 10 V ID = 6 A Figure 10. Normalized V(BR)DSS vs temperature GADG070620181154BDV 1.04 1.02 1.00 0.98 0.96 0.94 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 11. Source-drain diode forward characteristics GADG070620181154SDF 0.9 0.8 0.7 0.6 0.5 0.4 0 2 4 6 8 10 VSD (V) ISD (A) TJ = 150 °C TJ = 25 °C TJ = -55 °C STL12N10F7 Electrical characteristics (curves) DS12044 - Rev 2 page 5/13 |
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