D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

8

1

2

3

4

7

6

5

AM15810v1

Features

Order code

VDS

RDS(on) max.

ID

STL12N10F7

100 V

13.3 mΩ

12 A

•

Among the lowest RDS(on) on the market

•

Excellent FoM (figure of merit)

•

Low Crss/Ciss ratio for EMI immunity

•

High avalanche ruggedness

Applications

•

Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

Product status link

STL12N10F7

Product summary

Order code

STL12N10F7

Marking

12N10

Package

PowerFLAT™ 3.3x3.3

Packing

Tape and reel

N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET

in a PowerFLAT™ 3.3x3.3 package

STL12N10F7

Datasheet

DS12044 - Rev 2 - June 2018

For further information contact your local STMicroelectronics sales office.

www.st.com