1

Characteristics

Table 1. Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave), S = 5cm²

Tamb = 64 °C

0.45

A

Ttab = 76 °C

0.8

ITSM

Non repetitive surge peak on-state current

Tj initial = 25 °C, (full cycle sine wave)

tp = 20 ms

13

A

tp = 16.7 ms

13.7

I2t

I2t for fuse selection

tp = 10 ms

1.1

A2s

dI/dt

Critical rate of rise on-state current IG = 2 x IGT, tr ≤ 100 ns

f = 120 Hz, Tj = 125 °C

100

A/μs

VPP(1)

Non repetitive line peak pulse voltage

2

kV

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

W

VGM

Peak positive gate voltage

Tj = 125 °C

10

V

IGM

Peak gate current (tp = 20 μs)

Tj = 125 °C

1

A

Tstg

Storage temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-30 to +125

°C

1. according to test described by standard IEC 61000-4-5, see Figure 15. Overvoltage ruggedness test circuit for resistive and

inductive loads, Tamb = 25 °C (conditions equivalent to IEC 61000-4-5 standard) for conditions

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT (1)

VOUT = 12 V, RL = 33 Ω

II - III

Max.

10

mA

VGT

Max.

1.0

V

VGD

VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C

II - III

Min.

0.15

V

IH

IOUT = 100 mA

Max.

10

mA

IL

IG = 1.2 x IGT

Max.

25

mA

dV/dt

VOUT = 402 V, gate open, Tj = 125 °C

Min.

2000

V/μs

VOUT = 536 V, gate open, Tj = 125 °C

400

(dI/dt)c

Without snubber (15 V/μs), Tj = 125 °C, turn-off time ≤20 ms

Min.

2

A/ms

VCL

ICL = 0.1 mA, tp = 1 ms

Min.

850

V

1. Minimum IGT is guaranteed at 10% of IGT max.

ACS108-8SA

Characteristics

DS12901 - Rev 1

page 2/13