DF2S12P2CTC

3

6.2. Clamp Voltage - Peak Pulse Current (VC - IPP) (Note)

Fig. 6.2.1

VC - IPP

Fig. 6.2.2

Based on IEC61000-4-5 8/20 µs

pulse.

Note:

The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Electrostatic discharge voltage (IEC61000-4-2) (Contact)

Electrostatic discharge voltage (IEC61000-4-2) (Air)

Peak pulse power (tp = 8/20 µs)

Peak pulse current (tp = 8/20 µs)

Junction temperature

Storage temperature

Symbol

VESD

PPK

IPP

Tj

Tstg

Note

(Note 1)

(Note 2)

Rating

±30

±30

2160

60

150

-55 to 150

Unit

kV

W

A

�

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to IEC61000-4-5.

2022-11-02

Rev.1.0

©2018-2022

Toshiba Electronic Devices & Storage Corporation