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DF2S12P2CTC Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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DF2S12P2CTC Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page ![]() DF2S12P2CTC 1 ESD Protection Diodes Silicon Epitaxial Planar DF2S12P2CTC Start of commercial production 2022-10 1. General The DF2S12P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S12P2CTC has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S12P2CTC is housed in an ultra-compact package (1.6 mm × 0.8 mm) to meet applications that require a small footprint. 2. Applications Mobile Equipment � Smartphones � Tablets � Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. Features (1) Suitable for use with a 9 V signal line. (VRWM ≤ 10 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ.)) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 30 V@IPP = 60 A (typ.)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.6 mm × 0.8 mm size (Nickname: CST2C)) 4. Packaging CST2C 2022-11-02 Rev.1.0 ©2018-2022 Toshiba Electronic Devices & Storage Corporation |
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