MS1451

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DESCRIPTION:

DESCRIPTION:

The MS1451 is a gold metallized silicon NPN planar transistor

designed for high linearity Class AB operation in cellular

base station applications. The MS1451 is designed as a

medium power output device or as the driver for MS1452.

Diffused emitter ballast resistors provide thermal stability

and reliability under Class AB linear operation.

ABSO

ABSOLUTE MAXIMUM RATINGS

LUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

48

V

Collector-Emitter Voltage

30

V

Collector-Emitter Voltage

45

V

Emitter-Base Voltage

3.5

V

Power Dissipation

29

W

Device Current

2.5

A

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

6.0

°°C/W

Features

Features

• 800-960 MHz

• 24 VOLTS

• CLASS AB LINEAR OPERATION

• G

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

800-960 MHz BASE STATION APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855