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APTM100H45ST Datasheet(PDF) 1 Page - Advanced Power Technology |
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APTM100H45ST Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page  APTM100H45ST APT website – http://www.advancedpower.com 1 – 6 O UT1 OUT2 G1 S1 CR2A Q1 CR1A CR3B CR1B G2 S2 NTC1 CR2B Q2 CR4B 0/VBUS CR4A CR3A G4 G3 S3 S4 Q4 NTC2 Q3 VBUS OUT1 OUT2 NTC1 NTC2 G3 S3 VBUS G1 S1 G4 G2 S2 0/VBUS S4 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1000 V Tc = 25°C 18 ID Continuous Drain Current Tc = 80°C 14 IDM Pulsed Drain current 72 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 450 m Ω PD Maximum Power Dissipation Tc = 25°C 357 W IAR Avalanche current (repetitive and non repetitive) 18 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 2500 mJ VDSS = 1000V RDSon = 450mΩ max @ Tj = 25°C ID = 18A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Full bridge Series & parallel diodes MOSFET Power Module |
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