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APTM100H45ST Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APTM100H45ST
Description  Full bridge Series & parallel diodes MOSFET Power Module
PDF  6 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM100H45ST Datasheet(HTML) 2 Page - Advanced Power Technology

  APTM100H45ST Datasheet HTML 1Page - Advanced Power Technology APTM100H45ST Datasheet HTML 2Page - Advanced Power Technology APTM100H45ST Datasheet HTML 3Page - Advanced Power Technology APTM100H45ST Datasheet HTML 4Page - Advanced Power Technology APTM100H45ST Datasheet HTML 5Page - Advanced Power Technology APTM100H45ST Datasheet HTML 6Page - Advanced Power Technology  
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APTM100H45ST
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250µA
1000
V
VGS = 0V,VDS= 1000V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 9A
450
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4350
Coss
Output Capacitance
715
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
154
Qgs
Gate – Source Charge
26
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 18A
97
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
121
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5Ω
35
ns
Eon
Turn-on Switching Energy
639
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
380
µJ
Eon
Turn-on Switching Energy
1046
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
451
µJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 30A
VR = 133V
di/dt = 200A/µs
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/µs
Tj = 125°C
150
nC



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