IXYS reserves the right to change limits, test conditions, and dimensions.

IXFC 96N15P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

35

45

S

C

iss

3500

pF

C

oss

V

1000

pF

C

rss

280

pF

t

d(on)

30

ns

t

r

V

33

ns

t

d(off)

R

66

ns

t

f

18

ns

Q

g(on)

110

nC

Q

gs

V

26

nC

Q

gd

59

nC

R

thJC

1.25 K/W

R

thCS

(TO-247, PLUS220)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

96

A

I

SM

Repetitive

250

A

V

SD

I

1.5

V

t

rr

I

200

ns

Q

RM

-di/dt = 100 A/

μs

600

nC

I

RM

V

6

A

Notes: 1. Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

Ref: IXYS CO 0177 R0

Note:

Bottom heatsink (Pin 4) is

electrically isolated from Pin

1,2, or 3.