TPD7212FN

2020-07-03

9

© 2020

Toshiba Electronic Devices & Storage Corporation

8. Absolute Maximum Ratings

Table 8.1 Absolute Maximum Ratings

(Ta = 25°C unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Note

Supply voltage

DC

VDD(DC)

-0.3 to 25.0

V

-

pulse

VDD(Pulse)

-0.3 to 40.0

V

t≦300ms

PGND voltage

VPGND

-0.3 to 0.3

V

Standard in SGND

Output voltage

High side

VxU

-0.3 to

VDH+0.3

V

UU,VU,WU pin

Low side

VxB

-0.3 to

VDL+0.3

V

UB,VB,WB pin

Output current

Source current

IxU

-1.0

A

-

Sink current

IxB

+1.5

A

-

Input voltage

IN1 to IN6

VIN

-0.3 to 6.0

V

-

EN

VEN

-0.3 to 25.0

V

-

Diagnosis output voltage

VDIAG

-0.3 to 6.0

V

-

Diagnosis output current

IDIAG

5

mA

-

Power dissipation

PD

2.6

W

-

Operating temperature

Topr

-40 to 150

℃

-

Junction temperature

Tj

175

℃

-

Storage temperature

Tstg

-55 to 175

℃

-

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating

ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

8.1. Thermal Resistance

Table 8.2 Thermal resistance

Charateristics

Symbol

Rating

unit

Thermal resistance (junction-to-

ambient)

Rth (j–a)

56

°C / W

Note: Glass epoxy board

Material: FR-4(4 layer)

Board size: 76.2mmx114.3mmx1.6mm