6

DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*

Notes:

* Post-radiation performance guaranteed at 25

°C per MIL-STD-883 Method 1019.

1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

SYMBOL

PARAMETER

CONDITION

MIN

MAX

UNIT

High-level input voltage

(CMOS)

V

Low-level input voltage

(CMOS)

V

V

OL

Low-level output voltage

I

0.4

V

Low-level output voltage

0.05

V

High-level output voltage

2.4

V

V

OH

High-level output voltage

I

4.45

V

C

IN

1

Input capacitance

ƒ = 1MHz @ 0V

25

pF

1

Bidirectional I/O capacitance

ƒ = 1MHz @ 0V

25

pF

I

IN

Input leakage current

V

-10

10

µA

Three-state output leakage current

G = 5.5V

-10

10

µA

I

OS

2,3

Short-circuit output current

-90

90

mA

mA

@ 22.2MHz

CMOS inputs (I

V

300

mA

@ 22.2 MHz

CMOS inputs (I

V

150

mA

@ 18.2MHz

CMOS inputs (I

V

275

mA

@ 18.2 MHz

CMOS inputs (I

138

mA

4

Supply current standby

1

mA