SD56120M datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

SD56120M

2/8

ELECTRICAL SPECIFICATION (TCASE = 25°C)

STATIC (Per Section)

* Includes Internal Input Moscap.

DYNAMIC

IMPEDANCE DATA

Measured drain to drain and gate to gate respectively.

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V

IDS = 10 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 20 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 100 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.7

0.8

GFS

VDS = 10 V

ID = 3 A

mho

CISS*VGS = 0 V

VDS = 28 V

f = 1 MHz

221

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

48.9

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

2.25

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

POUT

VDD = 32 V

IDQ = 400 mA

f = 860 MHz

120

GPS

VDD = 32 V

IDQ = 400 mA

POUT = 120 W

f = 860 MHz

ηD

VDD = 32 V

IDQ = 400 mA

POUT = 120 W

f = 860 MHz

Load

mismatch

VDD = 32 V

IDQ = 400 mA

POUT = 120 W

f = 860 MHz

ALL PHASE ANGLES

10:1

VSWR

FREQ.

ZIN (Ω)ZDL(Ω)

860 MHz

5.57 + j 3.488

4.21 - j 2.88

Typical Input

Impedance

Typical Drain

Load Impedance

Zin

ZDL

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