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IXDP20N60B Datasheet(PDF) 4 Page - IXYS Corporation |
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IXDP20N60B Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() © 2000 IXYS All rights reserved 4 - 4 IXDP 20N60 B IXDP 20N60 BD1 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 0 102030 0.0 0.5 1.0 1.5 0 25 50 75 010 20 30 0.0 0.2 0.4 0.6 0.8 0 100 200 300 400 10-5 10-4 10-3 10-2 10-1 100 101 0.001 0.01 0.1 1 0 102030 405060 70 0.00 0.25 0.50 0.75 1.00 0 200 400 600 800 0 10 203040506070 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 single pulse V CE = 300V V GE = ±15V R G = 22W T J = 125°C IXDP20N06B V CE = 300V V GE = ±15V I C = 20A T J = 125°C 0 100 200 300 400 500 600 700 0 20 40 60 80 R G = 22W T J = 125°C V CE = 300V V GE = ±15V R G = 22W T J = 125°C E on V CE = 300V V GE = ±15V I C = 20A T J = 125°C t d(on) t r t d(off) t f E on t d(on) t r E off t d(off) t f I C A I C A E off E on t t R G W R G W V CE t s mJ E on mJ E off ns t ns t I CM K/W Z thJC IGBT diode V A mJ ns ns mJ E off 5 |
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