1

2

3

TO-220

TAB

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STP65N150M9

650 V

150 mΩ

20 A

•

Worldwide best FOM RDS(on)*Qg among silicon-based devices

•

Higher VDSS rating

•

Higher dv/dt capability

•

Excellent switching performance

•

Easy to drive

•

100% avalanche tested

•

Zener-protected

Applications

•

High efficiency switching applications

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values,

among all silicon based fast switching super-junction Power MOSFETs, making

it particularly suitable for applications that require superior power density and

outstanding efficiency.

Product status link

STP65N150M9

Product summary

Order code

STP65N150M9

Marking

65N150M9

Package

TO-220

Packing

Tube

N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET

in a TO-220 package

STP65N150M9

Datasheet

DS13496 - Rev 3 - February 2023

For further information contact your local STMicroelectronics sales office.

www.st.com