1998

©

Document No. D16144EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SA1871

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2SA1871 is a transistor developed for high-speed high-

voltage switching and is ideal for use in switching elements such

as switching regulators and DC/DC converters.

FEATURES

•

New package with dimensions in between those of small signal

and power signal package

•

High voltage

•

Fast switching speed

•

Complementary transistor with 2SC4942

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

−600

V

Collector to emitter voltage

VCEO

−600

V

Emitter to base voltage

VEBO

−7.0

V

Collector current (DC)

IC(DC)

−1.0

A

Collector current (pulse)

IC(pulse)

PW

≤ 10 ms, duty cycle ≤ 50 %

−2.0

A

Total power dissipation

PT

7.5 cm

2

× 0.7 mm ceramic board used

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Electrode connection

1: Emitter

2: Collector

3: Base