1998

©

Document No. D16145EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SA1897

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2SA1897 features a low saturation voltage and is available

for high current control in small dimension. This transistor is ideal

for high efficiency DC/DC converters due to fast switching speed.

FEATURES

•

High current capacitance

•

Low collector saturation voltage and high hFE

•

Insulation type package supportable for radial taping

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

−30

V

Collector to emitter voltage

VCEO

−20

V

Emitter to base voltage

VEBO

−10

V

Collector current (DC)

IC(DC)

TC = 25

°C

−5.0

A

Collector current (pulse)

IC(pulse)

PW

≤ 10 ms, duty cycle ≤ 50 %

TC = 25

°C

−8.0

A

Base current (DC)

IB(DC)

−0.5

A

Total power dissipation

PT

1.0

W

Total power dissipation

PT

TC = 25

°C

6.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C