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STW28NK60Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW28NK60Z
Description  N-CHANNEL 600 V - 0.155??- 27A TO-247 Zener-Protected SuperMESH MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW28NK60Z Datasheet(HTML) 3 Page - STMicroelectronics

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STW28NK60Z
TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
600
S
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 150 µA
3
3.75
4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 13.5 A
0.155
0.185
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 13.5 A
26
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
6350
615
125
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 300 V, ID = 14 A,
RG =4.7 Ω, VGS = 10 V
(Resistive Load see Figure 17))
50
45
135
32
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480 V, ID = 28 A,
VGS = 10 V
189
34
103
264
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
27
108
A
A
VSD (1)
Forward On Voltage
ISD = 27 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 28 A, di/dt = 100 A/µs
VDD = 35V, Tj = 25°C
(see test circuit Figure 5)
820
10
23.5
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 28 A, di/dt = 100 A/µs
VDD = 35V, Tj = 150°C
(see test circuit Figure 5)
1020
14
27.5
ns
µC
A



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