1998

©

Document No. D16152EJ1V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTORS

2SC4942

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2SC4942 is a transistor developed for high-speed high-

voltage switching. This transistor is ideal for use in switching

devices such as switching regulators and DC/DC converters.

FEATURES

• New package with dimensions in between those of small

signal and power signal package

• High voltage

• Fast switching speed

• Complementary transistor with the 2SA1871

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the

devices and its recommended applications.

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

600

V

Collector to emitter voltage

VCEO

600

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

ID(DC)

1.0

A

Collector current (pulse)

ID(pulse)

PW

≤ 10 ms, duty cycle ≤ 50 %

2.0

A

Total power dissipation

PT

7.5 cm

2

× 0.7 mm ceramic board mounted

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Electrode connection

1. Emitter

2. Collector

3. Base