Nexperia

BC52xPAS series

60 V, 1 A PNP medium power transistors

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -30 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

ICBO

collector-base cut-off

current (emitter open)

VCB = -30 V; IE = 0 A; Tamb = 150 °C

-

-

-10

µA

IEBO

emitter-base cut-off

current (collector open)

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

DC current gain

BC52PAS

63

-

-

BC52-10PAS

63

-

-

BC52-16PAS

VCE = -2 V; IC = -5 mA; Tamb = 25 °C

63

-

-

BC52PAS

[1]

63

-

250

BC52-10PAS

[1]

63

-

160

BC52-16PAS

VCE = -2 V; IC = -150 mA; Tamb = 25 °C

[1]

100

-

250

BC52PAS

[1]

40

-

-

BC52-10PAS

[1]

40

-

-

hFE

BC52-16PAS

VCE = -2 V; IC = -500 mA; Tamb = 25 °C

[1]

40

-

-

VCEsat

collector-emitter

saturation voltage

IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1]

-

-

-500

mV

VBE

base-emitter voltage

VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1]

-

-

-1

V

Cc

collector capacitance

VCB = -10 V; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

15

-

pF

fT

transition frequency

VCE = -5 V; IC = -50 mA; f = 100 MHz;

Tamb = 25 °C

-

145

-

MHz

[1] pulsed; tp ≤ 300 µs; δ ≤ 0.02

006aac688

100

200

300

hFE

0

IC (A)

-10 - 4

-10

- 1

-10 - 3

-10 - 1

-10 - 2

(1)

(2)

(3)

VCE = -2 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 7. DC current gain as a function of collector

current; typical values

VCE (V)

0

- 2.0

- 1.6

- 0.8

- 1.2

- 0.4

006aaa230

- 0.8

- 0.4

- 1.2

- 1.6

IC

(A)

0

- 4.5

- 9

- 13.5

- 18

- 22.5

- 27

- 31.5

IB (mA) = - 45 - 40.5 - 36

Tamb = 25 °C

Fig. 8. Collector current as a function of collector-

emitter voltage; typical values

BC52XPAS_SER

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Product data sheet

6 December 2022

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