Nexperia

BC52xPAS series

60 V, 1 A PNP medium power transistors

006aac689

-0.4

-0.8

-1.2

VBE

(V)

0.0

IC (mA)

-10 - 1

-10 4

-10 3

- 1

-10 2

-10

(1)

(2)

(3)

VCE = -2 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 9. Base-emitter voltage as a function of collector

current; typical values

006aac690

- 1

-10 - 1

-10

VCEsat

(V)

-10 - 2

IC (mA)

-10 - 1

-10 4

-10 3

- 1

-10 2

-10

(1)

(2)

(3)

IC/IB = 10

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 10. Collector-emitter saturation voltage as a

function of collector current; typical values

11. Test information

11.1. Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

14-03-18

Dimensions in mm

0.65

max

0.04

max

0.3

0.2

0.45

0.35

2.1

1.9

1.1

0.9

0.35

0.25

2.1

1.9

1.6

1.4

1.3

2

1

3

Fig. 11. Package outline DFN2020D-3 (SOT1061D)

BC52XPAS_SER

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

6 December 2022

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