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APT47N65SC3 Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT47N65SC3
Description  Super Junction MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT47N65SC3 Datasheet(HTML) 4 Page - Microsemi Corporation

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APT47N65B_SC3
Typical Performance Curves
C
rss
C
iss
C
oss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 9, MAXIMUM SAFE OPERATING AREA
FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 11, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
10
100
600
0
10
20
30
40
50
0
50 100 150 200 250 300 350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
188
100
50
10
5
1
16
12
8
4
0
T
C =+25°C
T
J =+150°C
SINGLE PULSE
10mS
1mS
100µS
T
J =+150°C
T
J =+25°C
ID (A)
ID (A)
FIGURE 13, DELAY TIMES vs CURRENT
FIGURE 14, RISE AND FALL TIMES vs CURRENT
ID (A)
RG, GATE RESISTANCE (Ohms)
FIGURE 15, SWITCHING ENERGY vs CURRENT
FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
E
on
E
off
t
r
t
f
0
10
20
30
40
50
60
70
80
0
10 20
30
40
50
60
70
80
0
10
20
30
40
50
60
70 80
0 5 10 15 20 25 30 35 40 45 50
VDD = 400V
ID = 47A
TJ = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
V
DS= 300V
V
DS= 120V
V
DS= 480V
ID = 47A
t
d(on)
t
d(off)
E
on
E
off
350
300
250
200
150
100
50
0
2500
2000
1500
1000
500
0
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
30,000
10,000
1,000
100
10
200
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
120
100
80
60
40
20
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0



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