1999 Apr 26

2

NXP Semiconductors

Product data sheet

PNP medium power transistors

BSP31; BSP32; BSP33

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Telephony and general industrial applications.

DESCRIPTION

PNP medium power transistor in a SOT223 plastic

package. NPN complements: BSP41 and BSP43.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM288

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1.

Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BSP31

−

−70

V

BSP32; BSP33

−

−90

V

VCEO

collector-emitter voltage

open base

BSP31

−

−60

V

BSP32; BSP33

−

−80

V

VEBO

emitter-base voltage

open collector

−

−5

V

IC

collector current (DC)

−

−1

A

ICM

peak collector current

−

−2

A

IBM

peak base current

−

−200

mA

Ptot

total power dissipation

Tamb = 25 °C; note 1

−

1.3

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C