1999 Apr 26

3

NXP Semiconductors

Product data sheet

PNP medium power transistors

BSP31; BSP32; BSP33

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.01.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

93

K/W

Rth j-s

thermal resistance from junction to soldering point

12

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −60 V

−

−100

nA

IE = 0; VCB = −60 V; Tj = 150 °C

−

−50

μA

IEBO

emitter cut-off current

IC = 0; VEB = −5 V

−

−100

nA

hFE

DC current gain

BSP32

IC = −100 μA; VCE = −5 V; note 1

10

−

IC = −100 mA; VCE = −5 V; note 1

40

120

IC = −500 mA; VCE = −5 V; note 1

30

−

DC current gain

BSP31; BSP33

IC = −100 μA; VCE = −5 V; note 1

30

−

IC = −100 mA; VCE = −5 V; note 1

100

300

IC = −500 mA; VCE = −5 V; note 1

50

−

VCEsat

collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1

−

−250

mV

IC = −500 mA; IB = −50 mA; note 1

−

−500

mV

VBEsat

base-emitter saturation voltage

IC =

−150 mA; IB = −15 mA; note 1

−

−1

V

IC = −500 mA; IB = −50 mA; note 1

−

−1.2

V

Cc

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz

−

20

pF

Ce

emitter capacitance

IC = ic = 0; VEB = −0.5 V; f = 1 MHz

−

120

pF

fT

transition frequency

IC = −50 mA; VCE = −10 V; f = 100 MHz

100

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = −100 mA; IBon = −5 mA; IBoff = 5 mA

−

500

ns

toff

turn-off time

−

650

ns