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MSCSM70AM10CT3AG Datasheet(PDF) 5 Page - Microsemi Corporation |
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MSCSM70AM10CT3AG Datasheet(HTML) 5 Page - Microsemi Corporation |
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5 / 15 page ![]() 2.1 Features The following are key features of the MSCSM70AM10CT3AG device: • SiC Power MOSFET ◦ Low RDS(on) ◦ High-speed switching ◦ Ultra low loss • SiC Schottky Diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance 2.2 Benefits The following are benefits of the MSCSM70AM10CT3AG device: • High-efficiency converter • Outstanding performance at high-frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals for power and signal, for easy PCB mounting • Low profile • RoHS compliant 2.3 Applications The MSCSM70AM10CT3AG device is designed for the following applications: • Uninterruptible power supplies • Switched mode power supplies • EV motor and traction drive • Welding converters 3 Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0 Product Overview |
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