3

Electrical Specifications

This section shows the electrical specifications of the MSCSM70AM10CT3AG device.

3.1

SiC MOSFET Characteristics (Per MOSFET)

The following table shows the absolute maximum ratings per SiC MOSFET of the MSCSM70AM10CT3AG

device.

Table 1 • Absolute Maximum Ratings

Unit

Max Ratings

Parameter

Symbol

V

700

Drain-source voltage

VDSS

A

241

1

TC = 25 °C

Continuous drain current

ID

192

1

TC = 80 °C

482

Pulsed drain current

IDM

V

–10/25

Gate-source voltage

VGS

mΩ

9.5

Drain-source ON resistance

RDSon

W

690

TC = 25 °C

Power dissipation

PD

Note:

1. Specification of the SiC MOSFET device, but output current must be limited due to

size of power connectors.

The following table shows the electrical characteristics per SiC MOSFET of the MSCSM70AM10CT3AG device.

Table 2 • Electrical Characteristics

Unit

Max

Typ

Min

Test Conditions

Characteristic

Symbol

µA

200

VGS = 0 V; VDS = 700 V

Zero gate voltage drain current

IDSS

mΩ

9.5

7.5

TJ = 25 °C

VGS = 20 V

ID = 80 A

Drain-source on resistance

RDS(on)

9.5

TJ = 175 °C

V

2.4

1.9

VGS = VDS, ID = 8 mA

Gate threshold voltage

VGS(th)

nA

200

VGS = 20 V, VDS = 0 V

Gate-source leakage current

IGSS

4

Microsemi Proprietary and Confidential MSCSM70AM10CT3AG Datasheet Revision 1.0

Electrical Specifications