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STTH60RQ06CWL Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH60RQ06CWL Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() Figure 7. Reverse recovery time versus dIF/dt (typical values) 0 40 80 120 160 200 240 0 50 100 150 200 250 300 350 400 450 500 VR = 400 V Tj = 125°C IF = 30 A IF = 7.5 A IF = 15 A dIF /dt(A/µs) tRR(ns) Figure 8. Reverse recovery charges versus dIF/dt (typical values) 0 200 400 600 800 0 50 100 150 200 250 300 350 400 450 500 VR = 400 V Tj = 125°C IF = 30 A IF = 7.5 A IF = 15 A dIF /dt(A/µs) QRR(nC) Figure 9. Reverse recovery softness factor versus dIF/dt (typical values) 0.0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300 350 400 450 500 VR = 400 V Tj = 125°C dIF /dt(A/µs) Sfactor Figure 10. Relative variations of dynamic parameters versus junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 V R = 400 V Reference :Tj = 125 °C Tj(°C) IF = IF(AV) IRM SFACTOR QRR Figure 11. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 1 10 100 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25°C VR(V) Figure 12. Relative variation of non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 tp(ms) IFSM(tp) / IFSM(10 ms) STTH60RQ06CWL Characteristics (curves) DS13257 - Rev 3 page 5/11 |
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